| 摘要 |
A semiconductor memory device according to the embodiment of the present invention may include: a memory array which includes memory strings connected between each of bit lines and a common source line; and a peripheral circuit which is connected to the memory array through the bit lines, generates a bit line voltage changed according to the temperature of the memory array, provides it to one selected among the bit lines, and provides a program prohibition voltage to a non-selected bit line. So, the reliability of program operation can be improved. |
