| 摘要 |
The present invention relates to a method for producing graphene grown on a substrate and graphene grown on a substrate. The method for producing graphene grown on a substrate comprises the following steps of: a. arranging a metal layer on a substrate; b. providing an etching gas and a carbon-containing gas, and conducting electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-CVD); c. supplying an etching gas for the metal layer when supplying the carbon-containing gas, and growing graphene on the metal layer; and d. continuously conducting ECR-CVD from the process of the c, and growing graphene on the substrate without the metal layer by continuously removing all of the metal in the metal layer by the etching gas. |
