发明名称 SEMICONDUCTOR DEVICE
摘要 The purpose of the present invention is to provide a semiconductor device capable of improving operation performance and reliability to effectively discharge a heat generated in a transistor. The semiconductor device comprises: a first pin-type pattern including a first lower pattern and a first upper pattern successively laminated on a substrate, wherein the first upper pattern includes a first part and a second part arranged on both sides of the first part; a gate electrode interacting with the first pin-type pattern on the first part; and a source/drain on the second part. The concentration of impurity included in the first upper pattern is greater than the concentration of the impurity included in the first lower pattern and concentration of the impurity included in the substrate. The concentration of the impurity included in the first lower pattern is different from the concentration of the impurity included in the substrate.
申请公布号 KR20160096907(A) 申请公布日期 2016.08.17
申请号 KR20150018562 申请日期 2015.02.06
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PAE SANG WOO;JEON, JONG WOOK;CHOO, SEUNG JIN;SAGONG, HYUN CHUL;CHOI, JAE HEE
分类号 H01L29/78 主分类号 H01L29/78
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