发明名称 SUBSTRATE PROCESSING APPARATUS, GAS RECTIFYING PART, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
摘要 A substrate processing apparatus prevents process uniformity from being deteriorated due to the non-uniformity of the temperature distribution of a substrate. The substrate processing apparatus comprises a process chamber for processing a substrate; a substrate mounting unit which is installed in the process chamber, and on which the substrate is mounted; a heating part which heats the substrate; a gas rectifying part which supplies a process gas to the substrate; a seal part which is installed in the gas rectifying part; an insulation part which is installed between the seal part and the upper surface of the gas rectifying part; and a first pressure control part which is connected to the insulation part.
申请公布号 KR20160097109(A) 申请公布日期 2016.08.17
申请号 KR20150108304 申请日期 2015.07.30
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 MATSUI SHUN;MORIMITSU KAZUHIRO;TOYODA KAZUYUKI
分类号 H01L21/314;H01L21/02;H01L21/324;H01L21/683 主分类号 H01L21/314
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