发明名称 |
SUBSTRATE PROCESSING APPARATUS, GAS RECTIFYING PART, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM |
摘要 |
A substrate processing apparatus prevents process uniformity from being deteriorated due to the non-uniformity of the temperature distribution of a substrate. The substrate processing apparatus comprises a process chamber for processing a substrate; a substrate mounting unit which is installed in the process chamber, and on which the substrate is mounted; a heating part which heats the substrate; a gas rectifying part which supplies a process gas to the substrate; a seal part which is installed in the gas rectifying part; an insulation part which is installed between the seal part and the upper surface of the gas rectifying part; and a first pressure control part which is connected to the insulation part. |
申请公布号 |
KR20160097109(A) |
申请公布日期 |
2016.08.17 |
申请号 |
KR20150108304 |
申请日期 |
2015.07.30 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
MATSUI SHUN;MORIMITSU KAZUHIRO;TOYODA KAZUYUKI |
分类号 |
H01L21/314;H01L21/02;H01L21/324;H01L21/683 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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