| 摘要 |
A semiconductor light emitting element (1) includes; an n-type semiconductor layer (120), a light emitting layer (130), a p-type semiconductor layer (140), a p-side power supply portion (150), and an n-side power supply portion (160). A p-side power supply electrode (152) in the p-side power supply portion (150) and an n-side power supply electrode (162) in the n-side power supply portion (160) are provided at a rear side of the p-type semiconductor layer (140), a power supply insulating layer (170) set to have a first thickness is formed between the p-type semiconductor layer (140) and the p-side power supply electrode (152) or the n-side power supply electrode (162), and a portion where these electrodes are not provided is set to have a third thickness by forming the protective insulating layer (180) set to have a second thickness in addition to the power supply insulating layer (170). |
