发明名称 |
SYSTEMS AND METHODS FOR BIDIRECTIONAL DEVICE FABRICATION |
摘要 |
Methods and systems for double-sided semiconductor device fabrication. Devices having multiple leads on each surface can be fabricated using a high-temperature-resistant handle wafer and a medium-temperature-resistant handle wafer. Dopants can be introduced on both sides shortly before a single long high-temperature diffusion step diffuses all dopants to approximately equal depths on both sides. All high-temperature processing occurs with no handle wafer or with a high-temperature handle wafer attached. Once a medium-temperature handle wafer is attached, no high-temperature processing steps occur. High temperatures can be considered to be those which can result in damage to the device in the presence of aluminum-based metallizations. |
申请公布号 |
EP3055884(A1) |
申请公布日期 |
2016.08.17 |
申请号 |
EP20140870521 |
申请日期 |
2014.12.10 |
申请人 |
IDEAL POWER INC. |
发明人 |
BLANCHARD, RICHARD A.;ALEXANDER, WILLIAM C. |
分类号 |
H01L29/732;H01L21/822;H01L27/06;H01L27/082;H01L29/66;H01L29/73;H01L29/739;H01L29/747 |
主分类号 |
H01L29/732 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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