发明名称 |
SILICON NANOCRYSTAL LIGHT EMITTING DIODE AND FABRICATING METHOD OF THE SAME |
摘要 |
According to an embodiment of the present invention, silicon nanocrystal light emitting diode comprises: a photoelectric conversion layer formed of a silicon nitride layer including a silicon nanocrystal; an electron injection layer formed on the photoelectric conversion layer; and a hole injection layer, which faces the electron injection layer with the photoelectric conversion layer interposed therebetween, has an energy band gap higher than that of the photoelectric conversion layer, and has a refractive index lower than that of a silicon thin film. |
申请公布号 |
KR20160096959(A) |
申请公布日期 |
2016.08.17 |
申请号 |
KR20150018695 |
申请日期 |
2015.02.06 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
HUH, CHUL;KIM, BONG KYU;AHN, CHANG GEUN |
分类号 |
H01L51/50;H01L51/56 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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