发明名称 |
Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device |
摘要 |
It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment. |
申请公布号 |
EP2009687(B1) |
申请公布日期 |
2016.08.17 |
申请号 |
EP20080010537 |
申请日期 |
2008.06.10 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHNUMA, HIDETO;IMAHAYASHI, RYOTA;ILKUBO, YOICHI;MAKINO, KENICHIRO;NAGAMATSU, SHO |
分类号 |
H01L21/762;H01L27/12;H01L29/786 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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