METHOD FOR THE FABRICATION OF CU(INGA)SE2 THIN FILM SOLAR CELL AND THEREOF

摘要

The present invention relates to technology for growing a CIS thin film crystal by RTP. Cu_(2-x)Se is transformed into CuSe and/or CuSe2 by a first step RTP, thereby promoting crystal growth by the assistance of a liquid state in a second step RTP performed at a higher temperature compared to the first step, and also performing CIS thin film crystal growth having few defects. So, the problem of crystal growth in the RTP process can be solved.