METHOD FOR GROWING -Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURE

摘要

Provided are: a method for efficiently growing a high-quality, large diameter ²-Ga 2 O 3 -based single crystal film; and a crystalline layered structure having a ²-Ga 2 O 3 -based single crystal film grown using this growing method. As one embodiment, the present invention provides a method for growing a ²-Ga 2 O 3 -based single crystal film by using the HVPE method, and including a step for exposing a Ga 2 O 3 -based substrate (10) to a gallium chloride gas and an oxygen-containing gas, and growing a ²-Ga 2 O 3 -based single crystal film (12) on the principal surface (11) of the Ga 2 O 3 -based substrate (10) at a growing temperature of 900° C or higher.