发明名称 |
GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT |
摘要 |
An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having excellent light extraction efficiency and a high emission output in which a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length. The present light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer formed on the substrate, wherein a planar shape is a rectangular shape with vertical and longitudinal sides each having a different length, and a side surface of the gallium nitride-based compound semiconductor layer is not vertical to a principal surface of the substrate. |
申请公布号 |
EP2031665(B1) |
申请公布日期 |
2016.08.10 |
申请号 |
EP20070745319 |
申请日期 |
2007.06.08 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
MURAKI, NORITAKA;WATANABE, MUNETAKA |
分类号 |
H01L33/06;H01L33/20;H01L33/16;H01L33/22;H01L33/32;H01L33/38;H01L33/42;H01L33/62 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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