发明名称 MILLIMETER WAVE MONOLITHIC INTEGRATED CIRCUITS AND METHODS OF FORMING SUCH INTEGRATED CIRCUITS
摘要 A description is provided of a high-frequency, multi-stage, millimeter wave amplifier integrated circuit, and of a method for designing and constructing the circuit. The methods and structures have been created to enable the construction of an amplifier offering substantial gain at a relatively high power and high frequency, but occupying minimal area of an integrated circuit die. Various structures and methodologies are described which each contribute to the practical feasibility of constructing an amplifier with such performance in a relatively compact space.
申请公布号 EP2364524(A4) 申请公布日期 2016.08.10
申请号 EP20090825118 申请日期 2009.11.05
申请人 RAYTHEON COMPANY 发明人 BROWN, KENNETH W.;BROWN, ANDREW K.
分类号 H03F3/68;H03F3/195;H03F3/21 主分类号 H03F3/68
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