| 摘要 |
PROBLEM TO BE SOLVED: To provide a Cu film formation method which can tightly bury conductive materials of Cu inside fine recesses and which is optimal for obtaining wiring excellent in conductivity with high productivity.SOLUTION: A Cu layer formation method of an embodiment in which Cu is buried in recesses 16 formed on a surface of a workpiece 11, comprises: a first step of forming a Cu film 17 on a surface of the workpiece including inner surfaces of the recesses 16; and a second step of burying Cu in the recesses by flowing the Cu film due to a reflow process. In the middle of the second step, Cu atoms and Cu ions are supplied to the surface of the workpiece. |
