摘要 |
A field-effect transistor (FET) includes a plurality of semiconductor layers, a source electrode and a drain electrode contacting one of the semiconductor layers, a first dielectric layer on a portion of a top semiconductor surface between the source and drain electrodes, a first trench extending through the first dielectric layer and having a bottom located on a top surface or within one of the semiconductor layers, a second dielectric layer lining the first trench and covering a portion of the first dielectric layer, a third dielectric layer over the semiconductor layers, the first dielectric layer, and the second dielectric layer, a second trench extending through the third dielectric layer and having a bottom located in the first trench on the second dielectric layer and extending over a portion of the second dielectric, and a gate electrode filling the second trench. |
申请人 |
HRL LABORATORIES, LLC |
发明人 |
CHU, RONGMING;CHEN, MARY Y.;LI, ZIJIAN "RAY";BOUTROS, KARIM S.;CHEN, XU;BROWN, DAVID F.;WILLIAMS, ADAM J. |