发明名称 TANTALUM COIL FOR SPUTTERING AND METHOD FOR PROCESSING THE COIL
摘要 Provided is a tantalum coil for sputtering disposed between a substrate and a sputtering target, wherein the tantalum coil has irregularities so that the surface roughness Rz of the tantalum coil is 150 µm or more and the number of threads is 15 to 30 TPI (Threads per inch) in a transverse direction and 10 to 30 TPI in a vertical direction. An object of the present invention is to take measures to prevent the sputtered grains accumulated on the surface of a tantalum coil from flaking so as to prevent the generation of particles and arcing that is caused by the flaking of the sputtered grains accumulated on the surface of the coil disposed between a substrate and a sputtering target, and the adhesion of the scattered flakes onto the substrate surface; and thereby to provide a technology of improving the quality and productivity of electronic components and stably providing semiconductor elements and devices.
申请公布号 EP2554710(A4) 申请公布日期 2016.08.10
申请号 EP20110762557 申请日期 2011.03.14
申请人 JX NIPPON MINING & METALS CORPORATION 发明人 TSUKAMOTO, SHIRO
分类号 C23C14/00;C23C14/34;C23C14/44;C23C14/56;H01J37/34;H01L21/285 主分类号 C23C14/00
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