LIGHT EMITTING ELEMENT

摘要

A light emitting device comprising
an anode,
a cathode,
a light emitting layer disposed between the anode and the cathode and
an encapsulating layer,
wherein the temperature TA (°C) at which an annealing treatment is conducted after the formation of the encapsulating layer and the glass transition temperature TG (°C) of the material having the lowest glass transition temperature out of all materials each contained in an amount of 1 wt% or more in the light emitting layer satisfy the following formula (1), and the current density IA at a voltage of 5 V applied before the annealing treatment and the current density IB at a voltage of 5 V applied after the annealing treatment satisfy the following formula (2): TA < TG 0.50 × IA ‰¦ IB ‰¦ 0.95 × IA