摘要 |
A solid-state imaging device 1 includes photoelectric converting sections 11, 12, transfer sections 21, 22, first buffer sections 31, 32, second buffer sections 51, 52, first output sections 40, and second output sections 60. The photoelectric converting sections 11, 12 generate electric charges in response to incidence of light. The transfer sections 21, 22 transfer the generated electric charges in a first direction or in a second direction opposite thereto in response to three-phase or four-phase drive signals. The first buffer sections 31, 32 and the second buffer sections 51, 52 acquire the electric charges transferred in the first and second directions, respectively, by the transfer sections 21, 22 and transfer the acquired electric charges in the first and second directions, respectively, in response to two-phase drive signals. The first output sections 40 and the second output sections 60 acquire the electric charges transferred from the first buffer sections 31, 32 and from the second buffer sections 51, 52, respectively, and output signals according to the acquired electric charges. |