| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a group 13 nitride crystal substrate capable of performing grinding while suppressing occurrence of a scratch on a crystal surface using a grind stone having a stable grinding surface without performing complicated work when grinding a group 13 nitride crystal using a fixed abrasive grain, and further providing a high-quality group 13 nitride semiconductor substrate.SOLUTION: A method for manufacturing a group 13 nitride crystal substrate includes the steps of: grinding a group 13 nitride crystal using a grind stone at which an abrasive grain is fixed; and dressing the grind stone. The dressing step is performed when the stress applied to the group 13 nitride crystal becomes 0.3 to 0.7 kg/cmduring the grinding step. |
