| 摘要 |
FIELD: electricity.SUBSTANCE: invention relates to technology for production of semiconductor devices, in particular, to technology of making contacts of a semiconductor device. Method of making the semiconductor device presupposes forming of contacts on the basis of GeMoW with a doped layer of germanium. For formation of contacts at a pressure of 10Pa one applies a 15 nm-thick layer of arsenic-doped germanium As in a concentration of 10-10cmby the method of electron-beam evaporation, and then, using the high-frequency atomization method, one applies a 15-nm layer of Mo and 300-nm layer of tungsten W with density of high-frequency power equal to 0.7 W/cm, pressure of Ar equal to 0.8 Pa, followed by heat treatment in forming gas at a temperature of 800 °C during 7-15 minutes.EFFECT: invention enables reduction of defects density, higher technological effectiveness, improved parameters of devices, higher reliability and percentage yield.1 cl, 1 tbl |
