| 摘要 |
PROBLEM TO BE SOLVED: To provide a method capable of detecting the endpoint of etching without further lowering the etching speed of the entire plasma etching, in plasma etching of Bosch process or the like, including three steps of an isotropic etching step, a protective film formation step and a bottom surface etching step.SOLUTION: In a method performing plasma etching of an etched layer of a work having the etched layer and a lower layer film by three steps of an isotropic etching step, a protective film formation step and a bottom surface etching step, intensity of light generated from an etching product, produced by etching the etched layer, by reaction with plasma is measured in the bottom surface etching step, and then a determination is made whether or not the etching reached the lower layer film, from a change in the intensity of light measured in the bottom surface etching step. |
