| 摘要 |
PROBLEM TO BE SOLVED: To increase dielectric strength voltage between a first inductor and a second inductor which are stacked.SOLUTION: A semiconductor device comprises a multilayer wiring layer 400, a first inductor 310 and a second inductor 320 which are formed on a substrate 10. The multilayer wiring layer 400 includes insulation layers and wiring layers which are alternately stacked t (t≥3) times one by one in this order. The first inductor 310 is provided in an n-th wiring layer of the multilayer wiring layer 400. The second inductor 320 is provided in an m-th wiring layer (t≥m≥n+2) of the multilayer wiring layer 400 and located above the first inductor 310. The inductor located above the first inductor 310 is not provided in any wiring layer located between the n-th wiring layer and the m-th wiring layer. The first inductor 310 and the second inductor 320 constitute a signal transmission element 300 for mutually transmitting electrical signals. |
