发明名称 HIGH VOLTAGE WIDE BANDWIDTH AMPLIFIER
摘要 A high voltage amplifier and a method of assembling and of operating a high voltage amplifier are described. The device includes a first metal-oxide-semiconductor field-effect transistor (MOSFET) driven by a first gate drive circuit. The device also includes a second MOSFET driven by a second gate drive circuit and a first optocoupler coupled to the second gate drive circuit. The first MOSFET and the second MOSFET of the high voltage amplifier drive a first output voltage.
申请公布号 EP3053267(A1) 申请公布日期 2016.08.10
申请号 EP20140748438 申请日期 2014.07.23
申请人 RAYTHEON COMPANY 发明人 ORTIZ, JOE A.
分类号 H03F3/08;H03F1/48;H03F3/19;H03F3/30 主分类号 H03F3/08
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