| 摘要 |
FIELD: technological processes.SUBSTANCE: invention can be used for manufacturing of multilevel system of silicon integrated circuit interconnections. Invention relates to the method of manufacturing interconnections for semiconductor devices, including forming nanosized particles on the surface, growing nanomaterial on said nanosized particles, depositing conducting material on a substrate, forming composite material of nanomaterial and conducting material, forming interconnections isolated from each other, before forming nanosized particles alloy layer which contains a component for forming nanosized particles is applied, said component is an element or a combination of elements of I and/or VIII group, and a component for forming diffusion barrier layer, which is a transition metal or a combination of transition metals of IV-VI groups of Element periodic table, and thermal action on it.EFFECT: simplifying technology of forming interconnections, increasing electromigration resistance at high current density and increasing thermal stability of interconnections.7 cl, 2 dwg |
