| 摘要 |
The present invention relates to a method to increase pattern density of a structure on a substrate by using an integration technique. The method includes: a step of providing a substrate including a patterned layer including a first mandrel and a lower layer; a step of depositing a first equiangular spacer generating a first equiangular layer; a step of performing a first spacer reactive ion etching (RIE) process on the first equiangular layer generating a first spacer pattern; a step of performing a first mandrel pool removing the first mandrel; a step of depositing a second equiangular layer generating a second equiangular layer; a step of performing a second RIE process of generating a second spacer pattern, wherein the first space pattern functions as a second mandrel; a step of performing a second mandrel pool process of removing the first spacer pattern; and a step of transferring the second spacer pattern in the lower layer. Therefore, integration targets are the uniformity of patterning, the pulldown of structures, the slimming of the structures, and the gouging of the lower layer. |
