Metal oxynitride transistor devices

摘要

Transistors with a first metal oxynitride channel layer and a second metal oxynitride barrier layer are provided. The first metal oxynitride channel layer is lightly doped or without intentional doping to achieve high carrier mobility. Impurity atoms are introduced into the second metal oxynitride barrier layer and the donated carriers migrate or drift into the first metal oxynitride channel layer to effect high mobility conduction between source and drain.

主权项

1. A metal oxynitride transistor for forming an electronic circuit, comprises:
a substrate; a first metal oxynitride channel layer with a first metal oxynitride energy band gap, a first metal oxynitride electron affinity, a first metal oxynitride donor density and a first metal oxynitride channel layer thickness; a second metal oxynitride bather layer having a second metal oxynitride energy band gap, a second metal oxynitride electron affinity, a second metal oxynitride donor density and a second metal oxynitride barrier layer thickness to provide electrons, said second metal oxynitride donor density is higher than said first metal oxynitride donor density; a source layer with a source layer thickness; a drain layer with a drain layer thickness; and at least a first gate layer having a first gate layer length and a first gate layer thickness, wherein said first metal oxynitride energy band gap, said first metal oxynitride electron affinity, said second metal oxynitride energy band gap and said second metal oxynitride electron affinity are selected to form an conduction energy band step between said second metal oxynitride bather layer and said first metal oxynitride channel layer so that free electrons donated in said second metal oxynitride barrier layer will be separated from ionized donors and move into said first metal oxynitride channel layer to achieve high electron mobility for conduction between said source layer and said drain layer.