发明名称 半導体装置
摘要 A horizontal MOSFET is arranged in parallel to a horizontal MOSFET and a portion of a return current IL which flows to a linear solenoid flows as a current to the horizontal MOSFET. Therefore, a current which flows to a parasitic transistor is reduced and it is possible to suppress the current which flows to the parasitic transistor provided in the horizontal MOSFET. Since the current which flows to the parasitic transistor is reduced, it is possible to prevent the erroneous operation and breakdown of a semiconductor device forming a synchronous rectification circuit.
申请公布号 JP5962843(B2) 申请公布日期 2016.08.03
申请号 JP20150503051 申请日期 2014.02.28
申请人 富士電機株式会社 发明人 豊田 善昭
分类号 H01L21/8234;H01L21/336;H01L21/822;H01L27/04;H01L27/06;H01L27/088;H01L29/78 主分类号 H01L21/8234
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