发明名称 |
FORMING LED STRUCTURES ON SILICON FINS |
摘要 |
Methods of forming III-V LED structures on silicon fin templates are described. Those methods and structures may include forming an n-doped III-V layer on a silicon (111) plane of a silicon fin, forming a quantum well layer on the n-doped III-V layer, forming a p-doped III-V layer on the quantum well layer, and then forming an ohmic contact layer on the p-doped III-V layer. |
申请公布号 |
EP3050130(A1) |
申请公布日期 |
2016.08.03 |
申请号 |
EP20130894641 |
申请日期 |
2013.09.27 |
申请人 |
INTEL CORPORATION |
发明人 |
DASGUPTA, SANSAPTAK;THEN, HAN WUI;CHAU, ROBERT;RADOSAVLJEVIC, MARKO;CHU-KUNG, BENJAMIN;GARDNER, SANAZ |
分类号 |
H01L33/16;H01L21/02;H01L27/15;H01L33/00;H01L33/20;H01L33/32 |
主分类号 |
H01L33/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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