发明名称 |
PIXEL OF A CMOS IMAGER OF AN OPTICAL DETECTOR |
摘要 |
The invention relates to a pixel of a CMOS imager, the pixel comprising: an infrared photodiode suitable for generating an electric current when it is exposed to an optical radiation having a wavelength greater than 950 nanometers, a conversion circuit able to receive electrons and deliver a voltage with a value varying as a function of the number of received electrons, and a first switch connected between the infrared photodiode and the conversion circuit. |
申请公布号 |
EP3050107(A1) |
申请公布日期 |
2016.08.03 |
申请号 |
EP20140771547 |
申请日期 |
2014.09.17 |
申请人 |
THALES;COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
REVERCHON, JEAN-LUC RAYMOND;BELHAIRE, ERIC;BOIS, PHILIPPE |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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