SILICON CARBIDE SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME

摘要

A first main surface (P1) of a silicon carbide substrate (10) has a flat surface (FT) located in an element portion (CL) and a side wall surface (ST) located in a termination portion (TM). The silicon carbide substrate (10) has an impurity layer (11) having a portion located at each of the flat surface (FT) of the first main surface (P1) and a second main surface (P2). On the flat surface (FT), a Schottky electrode (31) is in contact with the impurity layer (11). On the second main surface (P2), a counter electrode (42) is in contact with the impurity layer (11). An insulating film (21) covers the side wall surface (ST). The side wall surface (ST) is inclined by not less than 50° and not more than 80° relative to a {000-1} plane. This suppresses the leakage current of a silicon carbide semiconductor device (101).