发明名称 Esd protection device
摘要 Electrostatic discharge (ESD) protection is provided for discharging current between input and output nodes. In accordance with various embodiments, an ESD protection device includes an open-base transistor having an emitter connected to the input node and a collector connected to pass current to the output node via a resistor in response to a voltage at the input node exceeding a threshold that causes the transistor to break down. The resistor is coupled across emitter and collector regions of a second open-base transistor that is configured to turn on for passing current in response to the current across the resistor exceeding a threshold that applies a threshold breakdown voltage across the second transistor. In some implementations, an emitter and/or base of the second transistor are connected to, or are respectively the same region as, a base and a collector of the first transistor.
申请公布号 EP2482314(B1) 申请公布日期 2016.08.03
申请号 EP20120152254 申请日期 2012.01.24
申请人 NXP B.V. 发明人 HOLLAND, STEFFEN;PAN, ZHIHAO
分类号 H01L27/02;H01L29/74;H01L29/87 主分类号 H01L27/02
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