发明名称 熱処理装置
摘要 The temperature of a semiconductor wafer is raised by light irradiation heating performed by halogen lamps. An infrared ray emitted from the semiconductor wafer whose temperature has been raised transmits through an infrared-transparent window made of silicon, and then is detected by an infrared camera. The infrared camera two-dimensionally detects the temperature of an entire surface of the semiconductor wafer. Based on a result of the detection obtained by the infrared camera, a temperature drop region having a relatively low temperature among the region of the semiconductor wafer is irradiated with laser light emitted from a laser light emission part. Accordingly, without rotating the semiconductor wafer, a temperature distribution can be made uniform with a high accuracy throughout the entire surface of the semiconductor wafer.
申请公布号 JP5964626(B2) 申请公布日期 2016.08.03
申请号 JP20120064628 申请日期 2012.03.22
申请人 株式会社SCREENホールディングス 发明人 楠田 達文
分类号 H01L21/26 主分类号 H01L21/26
代理机构 代理人
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