| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermal treatment device capable of uniformly heating a substrate.SOLUTION: An annular support ring 72 formed of quartz is coupled with a base ring 71 via a coupling member 73. Three support members 75 formed of silicon carbide are fixed on an inner periphery of the support ring 72. Each support member 75 is inclined against a horizontal plane by 15° or more and 30° or less. While an outer peripheral end of a semiconductor wafer is supported by the three support members 75, halogen light is radiated by a halogen lamp to perform thermal treatment. Silicon carbide absorbs the halogen light more sufficiently than quartz. Also, the support members 75 support in point contact with the outer peripheral end of the semiconductor wafer, and contact of a holding section 7 and the semiconductor wafer becomes minimum. Therefore, disturbance of a temperature distribution of the semiconductor wafer can be minimized by the support members 75, so as to uniformly heat the semiconductor wafer. |
