| 摘要 |
PROBLEM TO BE SOLVED: To deposit a thin film of ceramic etc., directly on a substrate of an organic semiconductor or of a resin material which is weak to heat and damage, at high speed with small damage.SOLUTION: A substrate 6 is arranged above a film deposition material 5 at a lower part 31a in a vacuum vessel 21, and the film deposition material is heated by being supplied with an electron beam 30 from a position in a vacuum vessel sideward part 31b and above the height of the film deposition material, thereby evaporated and sublimated, and the evaporated and sublimated evaporation and sublimation substance is deposited on the substrate. A plasma region 37 that is formed by the electron beam 30 and is positioned above the film deposition material 5 is set to be below the horizontal height of the electron beam to thereby make small a section where the evaporated and sublimated evaporation and sublimation substances pass through the plasma region, and the evaporation and sublimation substances are deposited on the substrate in a small-ionization-rate state. The sublimation substance is made larger in amount than the evaporation substance. A sublimation temperature is lowered by controlling partial pressure in the vacuum vessel to increase a sublimation amount. A height H of the electron beam from an evaporation surface of the film deposition material is equal to or larger than the diameter 4D of the electron beam. |
