发明名称 半導体装置
摘要 A transistor includes first and second control gates, and a storage gate. The storage gate is made to be a conductor, supplied with a specific potential, and then made to be an insulator, thereby holding the potential. Data is written by making the storage gate a conductor, supplying a potential of data to be stored, and making the storage gate an insulator. Data is read by making the storage gate an insulator, supplying a potential to a read signal line connected to one of a source and a drain of the transistor, supplying a potential for reading data to the first control gate, and then detecting a potential of a bit line connected to the other of the source and the drain.
申请公布号 JP5963922(B2) 申请公布日期 2016.08.03
申请号 JP20150136649 申请日期 2015.07.08
申请人 株式会社半導体エネルギー研究所 发明人 魚地 秀貴;鎌田 康一郎
分类号 H01L21/336;G11C11/404;G11C11/405;H01L21/8242;H01L21/8247;H01L27/10;H01L27/108;H01L27/115;H01L29/786;H01L29/788;H01L29/792 主分类号 H01L21/336
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