| 摘要 |
An object of the invention is to provide a material for forming a conductive antireflection film, which excels in an antistatic effect as well as suppressing a reflection of ultraviolet ray, is highly sensitive, and is capable of efficiently forming a fine resist pattern, wiring pattern, or the like at high resolution and low cast with a simple process without omission or dislocation of the pattern, by preventing accumulation of charges, even when an electron beam is used as exposure light. The material for forming a conductive antireflection film of the invention contains a base resin having conductivity, a crosslinking agent, a thermal acid generator, and a solvent. |
