スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法

摘要

A sputtering target including an oxide that, includes an indium element (In), a tin element (Sn), a zinc element (Zn) and an aluminum element (Al), and including a homologous structure compound represented by InAlO3ZnO)m (m is 0.1 to 10), wherein the atomic ratio of the indium element, the tin element, the zinc element and the aluminum element satisfies specific requirements.