| 摘要 |
The invention relates to a method for obtaining a thin layer of a material with the formula Cu(In,Ga)X2 wherein X represents a Selenium-type and/or Sulphur-type chalcogen element, for a photovoltaic cell, said method comprising the following steps: depositing, on a substrate defining a depositing surface, a set of starting elements so as to form a base layer, said set of starting elements belonging to the group comprising: Copper, Indium, Gallium, Selenium and/or Sulphur; thermal treatment of said base layer, wherein said base layer is heated to a predetermined temperature; a step of contactless electric field treatment, wherein an electric field (Ē) of a predetermined value is applied to the base layer, so as to obtain, after cooling, an active thin layer of Cu(In,Ga)X2. |
