发明名称 半導体レーザ素子及びその製造方法
摘要 A method of manufacturing a semiconductor laser element including: preparing a wafer; forming first grooves on at least one of an upper surface and a lower surface of the wafer, each of the first grooves being spaced apart from the optical waveguide formed in the wafer and extending in a direction intersecting the optical waveguide in a plan view; forming second grooves on the one of the upper surface and the lower surface of the wafer, each of the second grooves extending in a direction intersecting a straight line extended from each of the first grooves, and each of the second grooves having a smooth surface compared with the first grooves; dividing the wafer along the first grooves to obtain a plurality of laser bars; and dividing the laser bars in a direction intersecting an extending direction of the first grooves to obtain the semiconductor laser elements.
申请公布号 JP5961989(B2) 申请公布日期 2016.08.03
申请号 JP20110264344 申请日期 2011.12.02
申请人 日亜化学工業株式会社 发明人 谷坂 真吾;小泉 大樹
分类号 H01L21/301;B23K26/00;H01S5/323 主分类号 H01L21/301
代理机构 代理人
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