发明名称 |
METHOD FOR TREATMENT OF RECESSED STRUCTURES IN DIELECTRIC MATERIALS FOR SMEAR REMOVAL |
摘要 |
The present invention relates to a method for treatment of recessed structures in a dielectric material for smear removal during the manufacture of printed circuit boards, IC substrates and the like. The dielectric material is contacted with an aqueous solution comprising 60 to 80 wt.-% sulfuric acid and 0.04 to 0.66 mol/I peroxodisulfate ions peroxodisulfate ions. Smear is removed from the recessed structures by the method according to the present invention without penetration of process chemicals into the dielectric material and a sufficiently low copper etching rate is achieved. |
申请公布号 |
EP3049549(A1) |
申请公布日期 |
2016.08.03 |
申请号 |
EP20140758972 |
申请日期 |
2014.09.05 |
申请人 |
ATOTECH DEUTSCHLAND GMBH |
发明人 |
STEINHÄUSER, EDITH;WIESE, STEFANIE;GREGORIADES, LAURENCE JOHN;SCHIEMANN, JULIA;STAMP, LUTZ |
分类号 |
C23C18/24;C23C18/54;C23G1/10;H05K3/00 |
主分类号 |
C23C18/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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