| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve efficiency of power conversion in a magnetic energy regeneration circuit. <P>SOLUTION: A semiconductor device 100 has an IGBT (Insulated Gate Bipolar Transistor) 101 and a PiN diode 102 formed in one body, and is provided with a trench 11, an n<SP>+</SP>emitter region 6, an emitter electrode 7, and a first channel region 2 and a second channel region 3 on the top surface side of an n<SP>-</SP>support substrate 1. In the trench 11, a gate electrode 5 is provided through a gate insulating film 12. The surface area of the first channel region 2 is made larger than the surface area of the second channel region 3. The first channel region 2 and second channel region 3 are separated by the trench 11. The first channel region 2 and emitter electrode 7 are connected to each other only through a first contact portion. On the reverse surface side of the n<SP>-</SP>support substrate 1, an FS region 8 and a p collector region 9 are provided. An n<SP>+</SP>high-concentration region 10 is provided at a part of a surface layer of the p collector region 9. <P>COPYRIGHT: (C)2010,JPO&INPIT |
