发明名称 HIGH-FREQUENCY SEMICONDUCTOR AMPLIFIER
摘要 According to one embodiment, a high-frequency semiconductor amplifier (1) includes an input terminal (10), an input matching circuit (12), a high-frequency semiconductor amplifying element (14), an output matching circuit (21) and an output terminal (18). The input terminal (10) is inputted with a fundamental signal. The fundamental signal has a first frequency band and a first center frequency in the first frequency band. The input matching circuit (12) includes an input end and an output end. The input end of the input matching circuit (12) is connected to the input terminal (10). The high-frequency semiconductor amplifying element (14) includes an input end and an output end. The input end of the high-frequency semiconductor amplifying element (14) is connected to the output end of the input matching circuit (12). The high-frequency semiconductor amplifying element (14) is configured to amplify the fundamental signal.
申请公布号 EP3051693(A1) 申请公布日期 2016.08.03
申请号 EP20160152705 申请日期 2016.01.26
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKAGI, KAZUTAKA
分类号 H03F3/217;H01L23/66;H01P3/00;H03F1/56;H03F3/60 主分类号 H03F3/217
代理机构 代理人
主权项
地址