| 摘要 |
A thin film transistor array provided with thin film transistors arranged in a matrix. Each of the thin film transistor includes a gate electrode formed on a substrate; a gate insulation layer formed on the gate electrode; a source electrode and a drain electrode connected to a pixel electrode, formed on the gate insulation layer; a semiconductor layer formed between the source electrode and the drain electrode; an interlayer insulation film formed so as to cover the source electrode, the drain electrode, the semiconductor layer and a part of the pixel electrode; and an upper pixel electrode formed on the interlayer insulation film, the upper pixel electrode being connected to the pixel electrode. The gate electrode is connected to a gate wiring and the source electrode is connected to a source wiring and the interlayer insulation film has a concave portion. |
