| 摘要 |
Provided is a plasma CVD apparatus, which is not needed to be exposed to the air at the time of replacing a shield member, and which has an improved apparatus operation rate. Specifically, this plasma CVD apparatus is provided with: a plasma generating chamber; a film-forming processing chamber communicated with the plasma generating chamber; a shield member for plasma isolation, said shield member being disposed between the plasma generating chamber and the film-forming processing chamber; a plasma-generating starting material gas introducing section, through which the plasma generating chamber is supplied with a starting material gas for generating plasma; a film-forming starting material gas introducing section, through which the film-forming processing chamber is supplied with a starting material gas for forming a film; a shield member supply section, which previously stores an unused shield member, and which supplies the unused shield member as needed; and a shield member recovery section, which recovers and stores the used shield member. |
