发明名称 |
METAL-NITRIDE THERMISTOR MATERIAL, MANUFACTURING METHOD THEREFOR, AND FILM-TYPE THERMISTOR SENSOR |
摘要 |
Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Cr x Al y (N 1-w O w ) z (where 0.70 ‰¤ y/(x+y) ‰¤ 0.95, 0.45 ‰¤ z ‰¤ 0.55, 0 < w ‰¤ 0.35, and x+y+z = 1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. |
申请公布号 |
EP2937875(A4) |
申请公布日期 |
2016.08.03 |
申请号 |
EP20130866044 |
申请日期 |
2013.12.04 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
FUJITA, TOSHIAKI;TANAKA, HIROSHI;NAGATOMO, NORIAKI |
分类号 |
H01C7/04;C23C14/00;C23C14/06;C23C14/08 |
主分类号 |
H01C7/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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