发明名称 |
INTERCONNECTS WITH FULLY CLAD LINES |
摘要 |
A metallization layer including a fully clad interconnect and a method of forming a fully clad interconnect. An opening is formed in a dielectric layer, wherein the dielectric layer has a surface and the opening includes walls and a bottom. A diffusion barrier layer and an adhesion layer are deposited on the dielectric layer. An interconnect material is deposited on the dielectric layer and reflowed into the opening forming an interconnect. An adhesion capping layer and diffusion barrier capping layer are deposited over the interconnect. The interconnect is surrounded by the adhesion layer and the adhesion capping layer and the adhesion layer and the adhesion capping layer are surrounded by the diffusion barrier layer and the diffusion capping layer. |
申请公布号 |
EP3049244(A1) |
申请公布日期 |
2016.08.03 |
申请号 |
EP20140847477 |
申请日期 |
2014.09.25 |
申请人 |
INTEL CORPORATION |
发明人 |
CHANDHOK, MANISH;YOO, HUI JAE;JEZEWSKI, CHRISTOPHER;CHEBIAM, RAMANAN V.;CARVER, COLIN T. |
分类号 |
H01L21/768;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|