| 摘要 |
The present invention relates to a semiconductor wafer (10) comprising a monocrystalline substrate wafer (1) consisting essentially of silicon, the monocrystalline substrate wafer (1) being structured to have tips (3) on its top surface, each of the tips (3) being covered in the given order with a group-IIIB silicide layer (5) and a group-IIIB nitride layer (6), the group-IIIB nitride layer (6) being covered with a monocrystalline group-IIIA nitride layer (7, 8), especially a In x Al z Ga 1-(x+z) N layer with 0 ‰¤ x, z, (x+z) ‰¤ 1. |
