Method for coating a substrate with a TCO coating and thin film solar cell

摘要

The method for coating a substrate (1) with a transparent conductive oxide (TCO) layer (4), comprises depositing a layer directly one after another on the substrate by physical vapor deposition, depositing a barrier layer (2) for obstructing a material effect on an over deposited layer by diffusion of materials from the substrate in the direction of the overlying layer, depositing a seed layer (3) for setting a defined layer growth of the TCO-layer and depositing the TCO-layer. The barrier layer consists of a SiO xN yor SiO xor Si xN ywith 0 less than x less than or equal to 3 and 0 less than y less than or equal to 4. The method for coating a substrate (1) with a transparent conductive oxide (TCO) layer (4), comprises depositing a layer directly one after another on the substrate by physical vapor deposition, depositing a barrier layer (2) for obstructing a material effect on an over deposited layer by diffusion of materials from the substrate in the direction of the overlying layer, depositing a seed layer (3) for setting a defined layer growth of the TCO-layer and depositing the TCO-layer. The barrier layer consists of a SiO xN yor SiO xor Si xN ywith 0 less than x less than or equal to 3 and 0 less than y less than or equal to 4, where process parameters suitable for adjusting a barrier effect against the diffusion of material from the substrate are adjusted in the direction of the overlying layers for the production of the barrier layer. A desired haze value of the transparent conductive oxide-layer is adjusted for adjusting a defined layer growth of the transparent conductive oxide-layer deposited in the connection at the seed layer. The type of the seed layer is selected as the deposition conditions in such a way that a maximum lateral crystallite size of the transparent conductive oxide-layer is adjusted. The properties of the transparent conductive oxide-layer are adjusted by a change of growth phases with resting phases and/or reverse sputtering phases during the deposition of the seed layer. The seed layer is deposited from a SiO xN yor SiO xor Si xN ywith 0 less than x less than or equal to 3 and 0 less than y less than or equal to 4. A surface of the transparent conductive oxide-layer is structured and/or roughened by etching after the deposition of the transparent conductive oxide-layer.