发明名称 |
METHODS OF FORMING TUNEABLE TEMPERATURE COEFFICIENT FOR EMBEDDED RESISTORS |
摘要 |
Methods of forming resistor structures with tunable temperature coefficient of resistance are described. Those methods and structures may include forming an opening in a resistor material adjacent source/drain openings on a device substrate, forming a dielectric material between the resistor material and the source/drain openings, and modifying the resistor material, wherein a temperature coefficient resistance (TCR) of the resistor material is tuned by the modification. The modifications include adjusting a length of the resistor, forming a compound resistor structure, and forming a replacement resistor. |
申请公布号 |
EP3050076(A1) |
申请公布日期 |
2016.08.03 |
申请号 |
EP20130894081 |
申请日期 |
2013.09.27 |
申请人 |
INTEL CORPORATION |
发明人 |
HAFEZ, WALID;LEE, CHEN-GUAN;JAN, CHIA-HONG |
分类号 |
H01L21/027;H01L21/265;H01L21/336 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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