| 摘要 |
PROBLEM TO BE SOLVED: To improve heat uniformity of a wafer while securing a large dielectric strength voltage in a member for a semiconductor manufacturing device.SOLUTION: In a member for a semiconductor manufacturing device, an electrostatic chuck 20 having a wafer location face 22 is provided on a cooling device 40. A recess 26 is formed on the electrostatic chuck 20 toward the wafer location plane 22 from a plane opposite to a gas supply hole 42, and plural pores 34 are formed to penetrate to the wafer location plane 22 from a bottom 27 of the recess 26. An air-permeable plug 36 is filled and adhered in the recess 26. A step is provided on an inner face of the recess 26, and the recess 26 has a small-diameter section 32 near the wafer location plane 22, and a large-diameter section 30 near a jointing plane 44 of the cooling device 40. Also, depth of the large-diameter section 30 is 25% or more and 75% or less of depth of the recess 26, and a diameter of the large-diameter section 30 is 2 or more times and 2.5 or less times larger than the depth of the recess 26. |
