PLASMA PROCESSING METHOD AND PLASMA PROCESSING DEVICE

摘要

Provided are a plasma processing method and a plasma processing device of a semiconductor wafer which can stably detect a terminal. The present invention relates to the plasma processing device or the plasma processing method which processes a plurality of film layers pre-formed in a surface of a wafer arranged on a substrate plate arranged inside a processing room of a vacuum container by using plasma formed inside a corresponding processing room. The intensity of light of a plurality of wavelengths is detected by using data obtained by composing a result of receiving each of a plurality of periods by a light receiver for receiving the light of the wavelengths from the inside of the processing room processing the plasma.